The breakdown in a reverse biased P N junction diode is more likely to occur due to 1 large velocity of the minority charge

Question

The breakdown in a reverse biased P N junction diode is more likely to occur due to 1 large velocity of the minority charge carriers if the doping level is small 3 2 large velocity of the minority charge carriers if the doping level is large 3 strong electric field in a depletion region if the doping level is small 4 None of these

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