20 If a semiconductor has an intrinsic carrier concentration of 1 41 x 10 6 m3 when doped with 1021 m3 phosphorus then the

Question

20 If a semiconductor has an intrinsic carrier concentration of 1 41 x 10 6 m3 when doped with 1021 m3 phosphorus then the concentration of holes at room temperature will be 1 2 10 1 3 1 41 10 0 2 2 10 1 4 1 41 10 6

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