(a) A GaAs semiconductor resistor is doped with donor impurities at a concentra- tion of N = 2 x 10¹5 cm-3 and has a

Question

(a) A GaAs semiconductor resistor is doped with donor impurities at a concentra-
tion of N = 2 x 10¹5 cm-3 and has a cross-sectional area of 5 x 10-5 cm². A current
of 1 = 25 mA is induced in the resistor with an applied bias of 5 V. Determine the
length of the resistor. (b) Using the results of part (a), calculate the drift velocity of
the electrons. (c) If the bias applied to the resistor in part (a) increases to 20 V, deter-
mine the resulting current if the electrons are traveling at their saturation velocity of
5 x 10 cm/s.

Kunduz · Accepted Answer

Click to see the answer