For an n p n transistor doping concentration in Base region

Last updated: 6/11/2023

For an n p n transistor doping concentration in Base region is N 1015 cm 3 doping concentration in collector region is No 1017 cm 3 The width of the Base region is 5 m 1 x 10 12 F cm and q 1 6 x 10 19C The minimum reverse biasing voltage Vcg required across the CB Junction to get the Breakdown Due to punch through is a 12 V c 20 V b 15 V d 25 V