56 In pure Si material at a particular temperature the

Last updated: 6/10/2023

56 In pure Si material at a particular temperature the concentration of electron hole pairs is 1016 m It is doped with phosphorus with doping concentration of 1 ppm How many times the conductivity of the material increases due to doping It is given that concentration of Si atoms in Si material is 5 x 1028 atoms m and mobilities of electrons and holes are 0 13 m V s and 0 5 m V s respectively 1 102 3 1010 106 F C nelle 4 108