An n polysilicon gate n channel MOS transistor is made on a

Last updated: 6/24/2023

An n polysilicon gate n channel MOS transistor is made on a p type Si substrate with N 5 x 10 5 cm The SiO thickness is 100 in the gate region and the effective interface charge Q is 4 x 10 0 q C cm Find C and Cin on the C V characteristics and find Wm VFB and VT EXAMPLE