In a given N type Si material if donor concentration is one atom per 2 108 silicon atoms Assuming that effective mass of

Question

In a given N type Si material if donor concentration is one atom per 2 108 silicon atoms Assuming that effective mass of electron is equal to its true mass Find the value of temperature at which Fermi level coincides with the edge of conduction band density of atoms in Si is 5 1028 atoms per m 5x1028

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