Question:
In an intrinsic semiconductor the energy gap Eg is 1 2eV Its
Last updated: 6/14/2023
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In an intrinsic semiconductor the energy gap Eg is 1 2eV Its hole mobility is much smaller than electron mobility and independent of temperature What is the ratio between conductivity at 600K and that at 300K Assume that the temperature dependence of intrinsic carrier concentration nu is given by E 2KBT 1 no exp 1 1 01 x 106 1 2 1 09 x 10 1 3 1 1 4 1 2 where no is a constant