InSb is an intrinsic semiconductor with energy gap of 0 15

Last updated: 6/14/2023

InSb is an intrinsic semiconductor with energy gap of 0 15 ev A hall voltage of 4 07 mV is developed across 1 cm 1 mm 1mm bar of InSb when a current 1 0 1 A passes along x direction in the presence of magnetic induction 0 1 Wb m 2 along z direction Read the following passage to answer the given questions based Choose the correct options Marks 2 What will be the Hall coefficient if current is increased to 0 5 A OPTIONS 4 14 10 5 m 3 CA 1 8 14 10 5 m 3 C 1 4 07 10 5 m 3 CA 1