The required conductivity of an n-type silicon sample at T = 300 K is to be σ = 10 (2-cm)-¹. What donor impurity concentration

Question

The required conductivity of an n-type silicon sample at T = 300 K is to be σ = 10 (2-cm)-¹. What donor impurity concentration is required? What is the electron mobility corresponding to this impurity concentration? (b) A p-type silicon material is required to have a resistivity of p = 0.20 (-cm What acceptor impurity concentra- tion is required and what is the corresponding hole mobility?

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