3 676 66 mm 4 5766 6 nm 9 Pure Si at 500 K has equal number

Last updated: 6/12/2023

3 676 66 mm 4 5766 6 nm 9 Pure Si at 500 K has equal number of electron n 29 and hole n concentrations of 1 5 x 10 m Doping by indium increases n to 4 5 x 102 m The doped semiconductor is of 0 1 p type having electron concentration n 5 x 10 m concentration 2 n type with electron n 5 x 10 m 3 p type with electron n 2 5 x 10 m concentration concentration 4 n type with electron n 2 5 x 10 m The temperature of furnace is 200 C in its 30 3 676 66 nm 500 K of fuera 1 2 n 3 4 5766 6 mm fasta n a n R 1 5 x 10 m 1 sfamat 4 5 x 10 m n 5 x 10 mi fenen n 5 x 10 m ti 4 n n 2 5 x 100 m ti 2 5 x 10 m 200