Semiconductors Questions and Answers
![In a transistor amplifier when the signal changes by 0 04 V the base current changes by 20 A and collector current by 2 mA If collector load Re 10kn and R 20k Then find the voltage gain A 111](https://media.kunduz.com/media/sug-question-candidate/20210408164929031838-3284202.jpg?w=256)
Physics
SemiconductorsIn a transistor amplifier when the signal changes by 0 04 V the base current changes by 20 A and collector current by 2 mA If collector load Re 10kn and R 20k Then find the voltage gain A 111
![An NPN transistor circuit is arranged as shown in figure It is 1 in Question Type Single Correct Type 2 N P N R A common base amplifier circuit V A common emitter amplifier circuit out 3 A common collector amplifier circuit](https://media.kunduz.com/media/sug-question-candidate/20210408120211745725-1348182.jpg?w=256)
Physics
SemiconductorsAn NPN transistor circuit is arranged as shown in figure It is 1 in Question Type Single Correct Type 2 N P N R A common base amplifier circuit V A common emitter amplifier circuit out 3 A common collector amplifier circuit
![Example Design base resistor bias circuit for a CE amplifier such that operating point is VCE 8V and 1 2 mA You are supplied with a fixed 15V d c supply and a silicon transistor with B 100 Take base emitter voltage VE 0 6V Calculate also the value of load resistance that would be employed](https://media.kunduz.com/media/sug-question-candidate/20210609155036725735-3492228.jpg?w=256)
Physics
SemiconductorsExample Design base resistor bias circuit for a CE amplifier such that operating point is VCE 8V and 1 2 mA You are supplied with a fixed 15V d c supply and a silicon transistor with B 100 Take base emitter voltage VE 0 6V Calculate also the value of load resistance that would be employed
![Example consider silicon at T 300 K so that N 2 8 10 cm3 and N 1 04 10 cm If we assume the Fermi energy is 0 25 eV below the conduction band calculate the thermal equilibrium concentrations of electrons and holes The bandgap energy of silicon is 1 12 eV](https://media.kunduz.com/media/sug-question-candidate/20210513121933945246-3176862.jpg?w=256)
Physics
SemiconductorsExample consider silicon at T 300 K so that N 2 8 10 cm3 and N 1 04 10 cm If we assume the Fermi energy is 0 25 eV below the conduction band calculate the thermal equilibrium concentrations of electrons and holes The bandgap energy of silicon is 1 12 eV
![A transistor is used as an amplifier in CB mode with a load resistance of 5KQ The current gain of amplifier is 0 98 and input resistance is 700 the voltage gain and power gain respectively are Question Type Single Correct Type 170 68 6 2 80 75 6 3 60 66 6](https://media.kunduz.com/media/sug-question-candidate/20210408120301524876-1348182.jpg?w=256)
Physics
SemiconductorsA transistor is used as an amplifier in CB mode with a load resistance of 5KQ The current gain of amplifier is 0 98 and input resistance is 700 the voltage gain and power gain respectively are Question Type Single Correct Type 170 68 6 2 80 75 6 3 60 66 6
![stor used has transconductance 0 03 mho and current gain 25 If the above transistor is replaced with another one with transconductance 0 02 mho and current gain 20 the voltage gain will be NEET 2013 a 1 5G 0q Ugal c 5G b 1 3 G 2 G d G](https://media.kunduz.com/media/sug-question-candidate/20210609110208593412-712522.jpg?w=256)
Physics
Semiconductorsstor used has transconductance 0 03 mho and current gain 25 If the above transistor is replaced with another one with transconductance 0 02 mho and current gain 20 the voltage gain will be NEET 2013 a 1 5G 0q Ugal c 5G b 1 3 G 2 G d G
![103 The output from a NAND gate is divided into two in parallel and fed to another NAND gate The resulting gate is a NEET Kar 2013 cititos A Be a c NOT gate NOR gate C b AND gate d OR gate C](https://media.kunduz.com/media/sug-question-candidate/20210609110303884496-712522.jpg?w=256)
Physics
Semiconductors103 The output from a NAND gate is divided into two in parallel and fed to another NAND gate The resulting gate is a NEET Kar 2013 cititos A Be a c NOT gate NOR gate C b AND gate d OR gate C
![7 To get an output Y 1 in given circuit which of the following input will be correct 2012M B C A a 1 b 1 c 1 d 0 B 0 0 1 1 C 0 1 0 0 Y](https://media.kunduz.com/media/sug-question-candidate/20210609110133312673-712522.jpg?w=256)
Physics
Semiconductors7 To get an output Y 1 in given circuit which of the following input will be correct 2012M B C A a 1 b 1 c 1 d 0 B 0 0 1 1 C 0 1 0 0 Y
![SICS Topic wise 95 The figure shows a logic circuit with two inputs A and B and the output C The voltage wave forms across A B and C are as given The logic 2012 circuit gate is B C 1 1 a OR gate c AND gate The 13 t4 ts 16 b NOR gate d NAND gate a silicon transistor is](https://media.kunduz.com/media/sug-question-candidate/20210609110041883600-712522.jpg?w=256)
Physics
SemiconductorsSICS Topic wise 95 The figure shows a logic circuit with two inputs A and B and the output C The voltage wave forms across A B and C are as given The logic 2012 circuit gate is B C 1 1 a OR gate c AND gate The 13 t4 ts 16 b NOR gate d NAND gate a silicon transistor is
![12V 1kQ ww 1 switch 2 ILL 50mH 10092 www 5V 3 15 points In the R L circuit shown above the switch has been in position 1 for a very long time Then at t 0 the switch is moved to position 2 a Find the initial inductor current IL at t 0 b Find the circuit time constant when the switch is in position 2 c Find the final inductor current after switch is in position 2 for a very long time](https://media.kunduz.com/media/sug-question-candidate/20210617214225684579-3443308.jpg?w=256)
Physics
Semiconductors12V 1kQ ww 1 switch 2 ILL 50mH 10092 www 5V 3 15 points In the R L circuit shown above the switch has been in position 1 for a very long time Then at t 0 the switch is moved to position 2 a Find the initial inductor current IL at t 0 b Find the circuit time constant when the switch is in position 2 c Find the final inductor current after switch is in position 2 for a very long time
![In common base configuration transistor power gain is 800 and voltage gain is 840 If base current is 1 2 mA then collecter current will Question Type Single Correct Type 1 24 mA 2 12 MA 3 6 MA](https://media.kunduz.com/media/sug-question-candidate/20210405110720106867-1348182.jpg?w=256)
Physics
SemiconductorsIn common base configuration transistor power gain is 800 and voltage gain is 840 If base current is 1 2 mA then collecter current will Question Type Single Correct Type 1 24 mA 2 12 MA 3 6 MA
![Three photodiodes D D2 and D3 are made of semiconductors having band gaps of 2 5 eV 2eV and 3 eV respectively Which one will be able to detect light of wavelength 6000 Question Type Single Correct Type 1 D 2 D 3 D D](https://media.kunduz.com/media/sug-question-candidate/20210405125454517928-1348182.jpg?w=256)
Physics
SemiconductorsThree photodiodes D D2 and D3 are made of semiconductors having band gaps of 2 5 eV 2eV and 3 eV respectively Which one will be able to detect light of wavelength 6000 Question Type Single Correct Type 1 D 2 D 3 D D
![Three semiconductors are arranged in the increasing order of their energy gap as follows The correct arrangement is Question Type Single Correct Type 1 Tellurium germanium silicon 2 Tellurium silicon germanium 3 Silicon germanium tellurium 4 Silicon tellurium germanium](https://media.kunduz.com/media/sug-question-candidate/20210405115443429368-1348182.jpg?w=256)
Physics
SemiconductorsThree semiconductors are arranged in the increasing order of their energy gap as follows The correct arrangement is Question Type Single Correct Type 1 Tellurium germanium silicon 2 Tellurium silicon germanium 3 Silicon germanium tellurium 4 Silicon tellurium germanium
![d cova lent The device that can act as a complete electronic circuit is 2010 a junction diode b integrated circuit c junction transistor d zener diode](https://media.kunduz.com/media/sug-question-candidate/20210608145457416713-712522.jpg?w=256)
Physics
Semiconductorsd cova lent The device that can act as a complete electronic circuit is 2010 a junction diode b integrated circuit c junction transistor d zener diode
![electron n and hole n concentrations of 1 5 x 1016 m 3 Doping by indium increases nh to 4 5 x 1022 m 3 The doped semiconductor is of 2011M a n type with electron concentration n 5 x 10 m 3 b p type with electron concentration n 2 5 1010 m 3 c n type with electron concentration 2 5 1023 m 3 d p type having electron concentration De De 5 x 109 m 3](https://media.kunduz.com/media/sug-question-candidate/20210608145859479197-712522.jpg?w=256)
Physics
Semiconductorselectron n and hole n concentrations of 1 5 x 1016 m 3 Doping by indium increases nh to 4 5 x 1022 m 3 The doped semiconductor is of 2011M a n type with electron concentration n 5 x 10 m 3 b p type with electron concentration n 2 5 1010 m 3 c n type with electron concentration 2 5 1023 m 3 d p type having electron concentration De De 5 x 109 m 3
![Select the correct statement 1 In unbiased p n junction junction grows when Idiffusion Idrift 2 Drift current flows due to minorities from p to n side 3 In forward bias below the knee point Idiffusion Idrift 4 None of these](https://media.kunduz.com/media/sug-question-candidate/20210404131714399666-2983979.jpg?w=256)
Physics
SemiconductorsSelect the correct statement 1 In unbiased p n junction junction grows when Idiffusion Idrift 2 Drift current flows due to minorities from p to n side 3 In forward bias below the knee point Idiffusion Idrift 4 None of these
![In which of the following statements the obtained impure semiconductor is of p type 1 Germanium is doped with bismuth 2 Silicon is doped with antimony 3 Germanium is doped with gallium Silicon is doned with phosphorus](https://media.kunduz.com/media/sug-question-candidate/20210509173833432405-2955516.jpg?w=256)
Physics
SemiconductorsIn which of the following statements the obtained impure semiconductor is of p type 1 Germanium is doped with bismuth 2 Silicon is doped with antimony 3 Germanium is doped with gallium Silicon is doned with phosphorus
![1 2 B NOR gate X AND gate ABC 000 100 Question Type Single Correct Type C D1 11 1 When the output of X is connected to the input Y the resulting combination is equivalent to A B3 0 1 1 0 Y B](https://media.kunduz.com/media/sug-question-candidate/20210405115509530254-1348182.jpg?w=256)
Physics
Semiconductors1 2 B NOR gate X AND gate ABC 000 100 Question Type Single Correct Type C D1 11 1 When the output of X is connected to the input Y the resulting combination is equivalent to A B3 0 1 1 0 Y B
![Question Type Single Correct Type 1 N type germanium is negatively charged and P type germanium is positively charged 2 Both N type and P type germanium are neutral 3 N type germanium is positively charged and P type germanium is negatively charged Both N type and P type germanium are](https://media.kunduz.com/media/sug-question-candidate/20210405115429422285-1348182.jpg?w=256)
Physics
SemiconductorsQuestion Type Single Correct Type 1 N type germanium is negatively charged and P type germanium is positively charged 2 Both N type and P type germanium are neutral 3 N type germanium is positively charged and P type germanium is negatively charged Both N type and P type germanium are
![The transfer ratio current gain of a transistor is 50 The input resistance of the transistor when used in the common emitter configuration is 1KQ The peak Value for an A C input voltage of 0 01 V peak is Question Type Single Correct Type 1 100 A 2 0 01 MA 3 0 25 mA](https://media.kunduz.com/media/sug-question-candidate/20210405110730068897-1348182.jpg?w=256)
Physics
SemiconductorsThe transfer ratio current gain of a transistor is 50 The input resistance of the transistor when used in the common emitter configuration is 1KQ The peak Value for an A C input voltage of 0 01 V peak is Question Type Single Correct Type 1 100 A 2 0 01 MA 3 0 25 mA
![logic gate wiet switch watum burol wine a Padov It flow Diber it will offer R ndulum e Mexistence dulum il are ively d oil 1 NOR 3 OR 4 00 i B 0 i www R C LED Y 2 AND 4 NAND](https://media.kunduz.com/media/sug-question-candidate/20210617132601829669-2959516.jpg?w=256)
Physics
Semiconductorslogic gate wiet switch watum burol wine a Padov It flow Diber it will offer R ndulum e Mexistence dulum il are ively d oil 1 NOR 3 OR 4 00 i B 0 i www R C LED Y 2 AND 4 NAND
![To get an output below the input must be A a 0 b 0 c 1 B C 11 01 0 0 1 0 shown 2010 Y 84 85](https://media.kunduz.com/media/sug-question-candidate/20210608145616766295-712522.jpg?w=256)
Physics
SemiconductorsTo get an output below the input must be A a 0 b 0 c 1 B C 11 01 0 0 1 0 shown 2010 Y 84 85
![The drift velocity of free electrons in a conductor of length 6 m is 0 25 ms under the application of potential difference of 100 V The mobility of free electrons is 2 x 103 m V S 1 2 5 x 10 2 m V s 1 1 5 x 10 m V S 1 1 5 x 10 m V S 1](https://media.kunduz.com/media/sug-question-candidate/20210404120155873354-3097791.jpg?w=256)
Physics
SemiconductorsThe drift velocity of free electrons in a conductor of length 6 m is 0 25 ms under the application of potential difference of 100 V The mobility of free electrons is 2 x 103 m V S 1 2 5 x 10 2 m V s 1 1 5 x 10 m V S 1 1 5 x 10 m V S 1
![73 A p n photodiode is fabricated from a semiconductor with a band gap of 2 5 eV It can detect a signal of wavelength 2009 a 4000 nm c 4000 b 6000 nm d 6000 81 A B](https://media.kunduz.com/media/sug-question-candidate/20210608083351107342-712522.jpg?w=256)
Physics
Semiconductors73 A p n photodiode is fabricated from a semiconductor with a band gap of 2 5 eV It can detect a signal of wavelength 2009 a 4000 nm c 4000 b 6000 nm d 6000 81 A B
![55 In the following circuit the output Y for all possible inputs A and B is expressed by the truth table 2007 A B a ABY 011 011 101 110 c ABY 000 011 101 A B b ABY 001 010 100 110 d ABY 000 010 100 111 Y 70 a c 1 A p r band the ra is ne a c 71 The is e a c 72 The are](https://media.kunduz.com/media/sug-question-candidate/20210608083058187171-712522.jpg?w=256)
Physics
Semiconductors55 In the following circuit the output Y for all possible inputs A and B is expressed by the truth table 2007 A B a ABY 011 011 101 110 c ABY 000 011 101 A B b ABY 001 010 100 110 d ABY 000 010 100 111 Y 70 a c 1 A p r band the ra is ne a c 71 The is e a c 72 The are
![d 6000 A configuration A transistor is operated in common emitter at V 2 V such that a change in the base current from 100 A to 200 A produces a change in the collector current from 5 mA to 10 mA The current gain is 2009 a 100 c 50 b 150 2 75](https://media.kunduz.com/media/sug-question-candidate/20210608083432590815-712522.jpg?w=256)
Physics
Semiconductorsd 6000 A configuration A transistor is operated in common emitter at V 2 V such that a change in the base current from 100 A to 200 A produces a change in the collector current from 5 mA to 10 mA The current gain is 2009 a 100 c 50 b 150 2 75
![Two cells of emfs approximately 5V and 10V are to be accurately compared using a potentiometer of length 400 cm NCERT Exemplar a The battery that runs the potentiometer should have voltage of 8V b The battery of potentiometer can have a voltage of 15 V and R adjusted so that the potential drop across the wire slightly exceeds 10 V c The first portion of 50 cm of wire itself should have potential drop of 10 V d Potentiometer is usually used for comparing resistan and not voltages](https://media.kunduz.com/media/sug-question-candidate/20210404012153638648-2003290.jpg?w=256)
Physics
SemiconductorsTwo cells of emfs approximately 5V and 10V are to be accurately compared using a potentiometer of length 400 cm NCERT Exemplar a The battery that runs the potentiometer should have voltage of 8V b The battery of potentiometer can have a voltage of 15 V and R adjusted so that the potential drop across the wire slightly exceeds 10 V c The first portion of 50 cm of wire itself should have potential drop of 10 V d Potentiometer is usually used for comparing resistan and not voltages
![A compound generator is to supply a load of 250 lamps each rated at 100W 250 V the armature series and shunt windings have resistances of 0 06 2 0 04 2 and 50 respectively Determine the generated e m f when the machine is connected in i long shunt ii short shunt Take brush drop as 1 V per brush 6](https://media.kunduz.com/media/sug-question-candidate/20210608045219581619-3486556.jpg?w=256)
Physics
SemiconductorsA compound generator is to supply a load of 250 lamps each rated at 100W 250 V the armature series and shunt windings have resistances of 0 06 2 0 04 2 and 50 respectively Determine the generated e m f when the machine is connected in i long shunt ii short shunt Take brush drop as 1 V per brush 6
![A long cylinder having a diameter of 2 cm is maintained at 600 C and has an emissivity of 0 4 Surrounding the cylinder is another long thin walled concentric cylinder having a diameter of 6 cm and an emissivity of 0 2 on both the inside and outside surfaces The assembly is located in a large room having a temperature of 27 C Calculate the net radiant energy lost by the 2 cm diameter cylinder per meter of length Also calculate the temperature of the 6 cm diameter cylinder](https://media.kunduz.com/media/sug-question-candidate/20210403071121961176-3264118.jpg?w=256)
Physics
SemiconductorsA long cylinder having a diameter of 2 cm is maintained at 600 C and has an emissivity of 0 4 Surrounding the cylinder is another long thin walled concentric cylinder having a diameter of 6 cm and an emissivity of 0 2 on both the inside and outside surfaces The assembly is located in a large room having a temperature of 27 C Calculate the net radiant energy lost by the 2 cm diameter cylinder per meter of length Also calculate the temperature of the 6 cm diameter cylinder
![A transistor configuration is operated in common emitter at V 2 V such that a change in the base current from 100 A to 300 A produces a change in the collector current from 10 mA to 20 mA The current gain is 1 25 3 75 AIPMT Prelims 2011 2 50 4 100](https://media.kunduz.com/media/sug-question-candidate/20210607164432938906-3097791.jpg?w=256)
Physics
SemiconductorsA transistor configuration is operated in common emitter at V 2 V such that a change in the base current from 100 A to 300 A produces a change in the collector current from 10 mA to 20 mA The current gain is 1 25 3 75 AIPMT Prelims 2011 2 50 4 100
![9 Pure Si at 500 K has equal number of electron n and hole n concentrations of 1 5 x 1016 m Doping by indium increases n to 4 5 102 m 3 The doped semiconductor is of AIPMT Mains 2011 1 n type with electron concentration n 2 5 1023 m 3 2 p type having electron concentrations n 5 x 10 m e 3 n type with electron concentration n 2 5 1022 m 3 e 4 p type with electron concentration n 2 5 1010 m 3 e](https://media.kunduz.com/media/sug-question-candidate/20210607165016676223-3097791.jpg?w=256)
Physics
Semiconductors9 Pure Si at 500 K has equal number of electron n and hole n concentrations of 1 5 x 1016 m Doping by indium increases n to 4 5 102 m 3 The doped semiconductor is of AIPMT Mains 2011 1 n type with electron concentration n 2 5 1023 m 3 2 p type having electron concentrations n 5 x 10 m e 3 n type with electron concentration n 2 5 1022 m 3 e 4 p type with electron concentration n 2 5 1010 m 3 e
![The input resistance of a silicon transistor is 100 0 Base current is changed by 40 A which results in a change in collector current by 2 mA This transistor is used as a common emitter amplifier with a load resistance of 4 k The voltage gain of the amplifier is AIPMT Mains 2012 1 2000 2 3000 3 4000 4 1000](https://media.kunduz.com/media/sug-question-candidate/20210607163614435610-3097791.jpg?w=256)
Physics
SemiconductorsThe input resistance of a silicon transistor is 100 0 Base current is changed by 40 A which results in a change in collector current by 2 mA This transistor is used as a common emitter amplifier with a load resistance of 4 k The voltage gain of the amplifier is AIPMT Mains 2012 1 2000 2 3000 3 4000 4 1000
![wo identical balls are interconnected with a light and inextensible thread having length I The system is on a smooth horizontal table with the thread just taut Initial velocities of both as shown The kinetic nergy of the system after the string gets tout](https://media.kunduz.com/media/sug-question-candidate/20210607164342083362-3371989.jpg?w=256)
Physics
Semiconductorswo identical balls are interconnected with a light and inextensible thread having length I The system is on a smooth horizontal table with the thread just taut Initial velocities of both as shown The kinetic nergy of the system after the string gets tout
![An LED is constructed from a p n junction diode using GaAsP The energy gap is 1 9 eV The wavelength of the light emitted will be equal to NEET 2019 Odisha 1 654 x 10 11 m 3 654 nm 2 10 4 10 26 m 4 654 A](https://media.kunduz.com/media/sug-question-candidate/20210607155729287370-3097791.jpg?w=256)
Physics
SemiconductorsAn LED is constructed from a p n junction diode using GaAsP The energy gap is 1 9 eV The wavelength of the light emitted will be equal to NEET 2019 Odisha 1 654 x 10 11 m 3 654 nm 2 10 4 10 26 m 4 654 A
![16 Current in the circuit will be 200 www tak 43 3 2 8 D ww 200 40 a A b c 20 AAAA KH 300 www SV 17 The diode used in the circuit shown in the figure has](https://media.kunduz.com/media/sug-question-candidate/20210616160008874646-2662149.jpg?w=256)
Physics
Semiconductors16 Current in the circuit will be 200 www tak 43 3 2 8 D ww 200 40 a A b c 20 AAAA KH 300 www SV 17 The diode used in the circuit shown in the figure has
![A Zener diode having breakdown voltage equal to 15 V is used in a voltage regulator circuit shown in the figure The current through the diode is 1 10 mA 3 20 mA 20 V 2500 ww 15 V 2 15 mA 4 5 mA 1 k](https://media.kunduz.com/media/sug-question-candidate/20210616145413082372-2662149.jpg?w=256)
Physics
SemiconductorsA Zener diode having breakdown voltage equal to 15 V is used in a voltage regulator circuit shown in the figure The current through the diode is 1 10 mA 3 20 mA 20 V 2500 ww 15 V 2 15 mA 4 5 mA 1 k
![An n p n transistor circuit is arranged as shown the figure It is a common Vin N P N www1 1 1 Base amplifier circuit 2 Emitter amplifier circuit 3 Collector amplifier circuit 4 None of these R out Medica Divis](https://media.kunduz.com/media/sug-question-candidate/20210331131702208650-2164505.jpg?w=256)
Physics
SemiconductorsAn n p n transistor circuit is arranged as shown the figure It is a common Vin N P N www1 1 1 Base amplifier circuit 2 Emitter amplifier circuit 3 Collector amplifier circuit 4 None of these R out Medica Divis
![M 1 0 4m M 4m 2 M 0 M M 4m 0 M M 4m 3 If the ratio of the concentration of electrons and that of holes in a semiconductor is 7 5 and the ration their currents is 7 4 then the ratio of their drift velocities is 1 4 7 2 5 8 3 4 5 0 4 5 4](https://media.kunduz.com/media/sug-question-candidate/20210330195752412837-2662149.jpg?w=256)
Physics
SemiconductorsM 1 0 4m M 4m 2 M 0 M M 4m 0 M M 4m 3 If the ratio of the concentration of electrons and that of holes in a semiconductor is 7 5 and the ration their currents is 7 4 then the ratio of their drift velocities is 1 4 7 2 5 8 3 4 5 0 4 5 4
![Example 1 Fig 3 4 shows biasing with base resistor method Determine i the collector current Ic and collector emitter voltage VCE neglecting base emitter voltage ii If RB is changed to 50 K find the new operating point Given that 50](https://media.kunduz.com/media/sug-question-candidate/20210330170513216493-3251381.jpg?w=256)
Physics
SemiconductorsExample 1 Fig 3 4 shows biasing with base resistor method Determine i the collector current Ic and collector emitter voltage VCE neglecting base emitter voltage ii If RB is changed to 50 K find the new operating point Given that 50
![the emitter n the base t ification fact nmon ba base curre would b ing to A A B AB AB emitte ro for pre below is The expression of Y in following circuit is A alue of D M B C ABCD A B C D The combination of gates shown below yields A B a NAND gate C NOT gate the gates shown in the b A B A B d A B AB BO b A BCD d AB CD b OR gate d XOR gate In the circuit below A and B represent two inputs and C represents the output the circuit represents AO OC b AND gate d OR gate 40 The Boolean expression for the gate circuit shown below is a NOR gate e NAND gate I a 4 A 1 C A A A B 41 Identify the gate represented by the block diagram as shown in fig a AND gate c NAND gate 42 The logic gate having an output of 1 is a iv c ii b 4 1 1 A B 200 b NOT gate d NOR gate 43 The input of A and B for the Boolean expression H b 1 d iii 1 is b01](https://media.kunduz.com/media/sug-question-candidate/20210503105949780806-2662149.jpg?w=256)
Physics
Semiconductorsthe emitter n the base t ification fact nmon ba base curre would b ing to A A B AB AB emitte ro for pre below is The expression of Y in following circuit is A alue of D M B C ABCD A B C D The combination of gates shown below yields A B a NAND gate C NOT gate the gates shown in the b A B A B d A B AB BO b A BCD d AB CD b OR gate d XOR gate In the circuit below A and B represent two inputs and C represents the output the circuit represents AO OC b AND gate d OR gate 40 The Boolean expression for the gate circuit shown below is a NOR gate e NAND gate I a 4 A 1 C A A A B 41 Identify the gate represented by the block diagram as shown in fig a AND gate c NAND gate 42 The logic gate having an output of 1 is a iv c ii b 4 1 1 A B 200 b NOT gate d NOR gate 43 The input of A and B for the Boolean expression H b 1 d iii 1 is b01
![35 In a given circuit as shown the two input wave forms A and B are applied simultaneously D C d B a b A The resultant wave form at Y is 7 Y](https://media.kunduz.com/media/sug-question-candidate/20210503095904020543-2662149.jpg?w=256)
Physics
Semiconductors35 In a given circuit as shown the two input wave forms A and B are applied simultaneously D C d B a b A The resultant wave form at Y is 7 Y
![33 The constant a of a transistor is 0 9 What would be the change in the collector current corresponding to a change of 4 mA in the base current in a common emitter arrangement a 30 mA c 36 mA C 11 b 63 mA d 3 6 mA](https://media.kunduz.com/media/sug-question-candidate/20210503100002481419-2662149.jpg?w=256)
Physics
Semiconductors33 The constant a of a transistor is 0 9 What would be the change in the collector current corresponding to a change of 4 mA in the base current in a common emitter arrangement a 30 mA c 36 mA C 11 b 63 mA d 3 6 mA
![9 In a common base mode of transistor collector current is 5 488 mA for an emitter current of 5 60mA The value of the base current amplification factor will be a 48 b 49 c 50 d 51](https://media.kunduz.com/media/sug-question-candidate/20210503095837886424-2662149.jpg?w=256)
Physics
Semiconductors9 In a common base mode of transistor collector current is 5 488 mA for an emitter current of 5 60mA The value of the base current amplification factor will be a 48 b 49 c 50 d 51
![8 Design the simplest circuit that has three inputs x x2 and x3 which produces an output value of 1 whenever two of the input variables have the value 1 otherwise the output has to be 0 CO2 3MI](https://media.kunduz.com/media/sug-question-candidate/20210503083418954130-2275156.jpg?w=256)
Physics
Semiconductors8 Design the simplest circuit that has three inputs x x2 and x3 which produces an output value of 1 whenever two of the input variables have the value 1 otherwise the output has to be 0 CO2 3MI
![220 as figure the diodes are silicon diodes and Vr 0 7V the diodes D1 and D2 should be A B C D 6V D D K D1 on D2 on D1 off D2 off D1 off D2 on D1 on D2 off 3kQ A 12V 25](https://media.kunduz.com/media/sug-question-candidate/20210330111113157625-1953394.jpg?w=256)
Physics
Semiconductors220 as figure the diodes are silicon diodes and Vr 0 7V the diodes D1 and D2 should be A B C D 6V D D K D1 on D2 on D1 off D2 off D1 off D2 on D1 on D2 off 3kQ A 12V 25
![small balls are interconnected with a light and inextensible thread having length L The system is on a smooth horizontal table with the thread just taut Each ball is imparted a velocity v one towards the other ball and the other in a direction that is perpendicular to the velocity given to the first ball V L V a After how much time the thread will become taut again Calculate the kinetic energy of the system after the string gets taut](https://media.kunduz.com/media/sug-question-candidate/20210503075631662299-3267040.jpg?w=256)
Physics
Semiconductorssmall balls are interconnected with a light and inextensible thread having length L The system is on a smooth horizontal table with the thread just taut Each ball is imparted a velocity v one towards the other ball and the other in a direction that is perpendicular to the velocity given to the first ball V L V a After how much time the thread will become taut again Calculate the kinetic energy of the system after the string gets taut
![59 For the logic circuit shown the truth table is A BO ABY 000 a 0 1 0 100 1 1 1 ABY 001 c 0 1 1 101 10 1 b d ABY 000 0 1 1 101 111 ABY 001 0 1 0 100 1 1 0 Y NEFTC](https://media.kunduz.com/media/sug-question-candidate/20210503062324221359-3370042.jpg?w=256)
Physics
Semiconductors59 For the logic circuit shown the truth table is A BO ABY 000 a 0 1 0 100 1 1 1 ABY 001 c 0 1 1 101 10 1 b d ABY 000 0 1 1 101 111 ABY 001 0 1 0 100 1 1 0 Y NEFTC
![Q4 A flux quantum fluxoid is approximately equal to 2 x 107 gauss cm A type II superconductor is placed in a small magnetic field which is then slowly increased till the field starts penetrating the superconductor The strength of the field at this point is 2 x 10 gauss The applied field is further increased till superconductivity is completely destroyed The strength of the field is now 8 7 x 10 gauss Find the correlation length of the superconductor](https://media.kunduz.com/media/sug-question-candidate/20210503052346586057-3384895.jpg?w=256)
Physics
SemiconductorsQ4 A flux quantum fluxoid is approximately equal to 2 x 107 gauss cm A type II superconductor is placed in a small magnetic field which is then slowly increased till the field starts penetrating the superconductor The strength of the field at this point is 2 x 10 gauss The applied field is further increased till superconductivity is completely destroyed The strength of the field is now 8 7 x 10 gauss Find the correlation length of the superconductor
![3 A pure Si crystal has 5 1022 atoms m It is doped by 1 ppm concentration of pentavalent impurity The number of holes is n nn Take n 1 5 x 10 6 m a 4 5 x 10 m c 2 5 x 109 m b 4 5 x 106 m 3 d 2 5 x 106 m 3 d hel](https://media.kunduz.com/media/sug-question-candidate/20210615203250488288-2451506.jpg?w=256)
Physics
Semiconductors3 A pure Si crystal has 5 1022 atoms m It is doped by 1 ppm concentration of pentavalent impurity The number of holes is n nn Take n 1 5 x 10 6 m a 4 5 x 10 m c 2 5 x 109 m b 4 5 x 106 m 3 d 2 5 x 106 m 3 d hel
![20 Increase in temperature of a gas filled in a container would lead to a Increase in its mass b Increase in its kinetic energy c Decrease in its pressure d Decrease in intermolecular distance](https://media.kunduz.com/media/sug-question-candidate/20210503024133544627-2662149.jpg?w=256)
Physics
Semiconductors20 Increase in temperature of a gas filled in a container would lead to a Increase in its mass b Increase in its kinetic energy c Decrease in its pressure d Decrease in intermolecular distance